SKU:30940731437
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2sp
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- USA
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
GaAs, VGF Grown (110) ori. N type, Si-doped, 10 x 5 x 0.3 mm, 2spGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 5 x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (2. 4 3. 27)x10E18 cm^3 Mobility: 1630 1870 cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
4 inch dia SiO2/ Si wafer (Prime Grade)
2 for details
No power source is available inside the glove box and the customer needs to extend the power cord to the outside of the glovebox
Size: 10x10x 1
Thickness: 1
Capacity upper limit
User can easily compare the performance of the batteries tested in channels both visually and statistically
It can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres
wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition
container and top cover with O-ring
Item Description Qty 1 Optional 8 alligator clips with cable for universal connecting
10 pcs of gold coated spacer (double side coating
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