SKU:88753562944

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm

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Regular price $158.12 USD
Regular price $202.12 USD Sale price $158.12 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

Size:                 2"  Dia x 0

The slot die heads are available in 50mm or 100mm widths with optional thickness shims

Aluminum Oxide Substrates Al2O3

Position adjustment & accuracy X:   20 mm +/- 0

Detailed dimension drawing Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500 °C

It proves inert  for carbon and refractory metals in many severe situations

200 kgf/ cm^2

loops times charge/ discharge efficiency curve

Item This furnace module (liner&heating elements inside) is designed for easy replacement of the Two Zone Tube Furnace(Also available for Rotary Two Zone Tube Furnace)

Pocket Size(mil):     L300*W300*D30 Pocket Size(mm):    L7

fuel cell batteries

Polished:     both sides polished

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