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SKU:37080103240
Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.
and a host of other operations
It protects the lithium metal used in the anode from oxidation by providing an impermeable barrier against air and moisture while permitting the transfusion Lithium ions
This system provides most applications in battery testing fields such as electrode materials research
It can be easily placed into a glove box with a transition chamber diameter larger than 230mm
Package: Each wafer is packed in 1000 class clean room
industrial and commercial specifications
Appearance : silver grey
min order of $1000 is required
80mm Height 98mm O
One steel cylinder for releasing out sample
The customer can connect the KF25 bellows vacuum hose to the pump to increase exhaust rate and achieve higher vacuum
Crystal Color
Quick Dispatch:
Your Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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